Communication-concepts MPSH81 Manual de usuario

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PNP RF Transistor
This device is designed for general RF amplifier and mixer
applications to 250 mHz with collector currents in the 1.0 mA
to 30 mA range. Sourced from Process 75.
MMBTH81MPSH81
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 20 V
V
CBO
Collector-Base Voltage 20 V
V
EBO
Emitter-Base Voltage 3.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MPSH81 *MMBTH81
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
225
1.8
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 125
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 357 556
°
C/W
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3D
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MPSH81 / MMBTH81
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Indice de contenidos

Pagina 1 - MMBTH81MPSH81

PNP RF TransistorThis device is designed for general RF amplifier and mixerapplications to 250 mHz with collector currents in the 1.0 mAto 30 mA range

Pagina 2 - MPSH81 / MMBTH81

SOT-23 (FS PKG Code 49)SOT-23 Package DimensionsSeptember 1998, Rev. A11:1Scale 1:1 on letter size paperDimensions shown below are in:inches [millimet

Pagina 3

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an ex

Pagina 4 - Configuration: Figure 1.0

3Electrical Characteristics TA = 25°C unless otherwise notedOFF CHARACTERISTICSON CHARACTERISTICSV(BR)CEOCollector-Emitter Breakdown Voltage* IC

Pagina 5 - Configuration: Figure 3.0

MPSH81 / MMBTH81Typical Characteristics (continued)PNP RF Transistor(continued)Input / Output Capacitancevs Reverse Bias Voltage-10-8-6-4-2011.21.41.

Pagina 6 - Configuration: Figure 5.0

TO-92 Tape and Reel DataMarch 2001, Rev. B1©2001 Fairchild Semiconductor CorporationTO-92 PackagingConfiguration: Figure 1.0AMMO PACK OPTIONSee Fig 3.

Pagina 7 - TO-92 Package Dimensions

TO-92 Tape and Reel Data, continuedSeptember 1999, Rev. BTO-92 Reeling StyleConfiguration: Figure 2.0Style “A”, D26Z, D70Z (s/h)Machine Option “A” (H)

Pagina 8 - SOT-23 Unit Orientation

ITEM DESCRIPTIONBase of Package to Lead BendComponent HeightLead Clinch Height Component Base HeightComponent Alignment ( side/side )Component Alignme

Pagina 9 - SOT-23 Embossed Carrier Tape

TO-92 (FS PKG Code 92, 94, 96)TO-92 Package DimensionsJanuary 2000, Rev. B1:1Scale 1:1 on letter size paperDimensions shown below are in:inches [milli

Pagina 10 - SOT-23 (FS PKG Code 49)

SOT-23 PackagingConfiguration: Figure 1.0ComponentsLeader Tape500mm minimum or125 empty pocketsTrailer Tape300mm minimum or75 empty pocketsSOT-23 Tap

Pagina 11

Dimensions are in millimeterPkg typeA0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc TcSOT-23(8mm)3.15+/-0.102.77+/-0.108.0+/-0.31.55+/-0.051.125+/-0.1251.75+/-0.1

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