Communication-concepts MRF151G Manual de usuario Pagina 1

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RF Power Field-Effect Transistor
300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
M/A-COM Products
RoHS Compliant
MRF151G
Part Status: Released
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
Low Thermal Resistance — 0.35°C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Description and Applications
Designed for broadband commercial and military
applications at frequencies to 175 MHz. The high
power, high gain and broadband performance of this
device makes possible solid state transmitters for
FM broadcast or TV channel frequency bands.
Package Outline
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Indice de contenidos

Pagina 1 - MRF151G

1 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 2

2 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 3

3 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 4

4 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 5

5 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 6

6 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 7

7 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 8

8 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

Pagina 9

9 RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET M/A-COM Products RoHS Compliant MRF151G Part Status: Released • N

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