Communication-concepts MJE243 Manual de usuario Pagina 4

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MJE243 NPN, MJE253 PNP
http://onsemi.com
4
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1
30
0.01
0.05
Figure 5. Active Region Safe Operating Area
500ms
dc
5.0
20107.05.03.02.01.0
100ms
T
J
= 150°C
I
C
, COLLECTOR CURRENT (AMP)
0.2
0.5
1.0
2.0
0.02
1.0ms
1007050
5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
MJE243/MJE253
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
I
C
, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. TurnOff Time
t, TIME (ns)
30
20
0.01 0.03 0.05 0.50.2
0.02
0.1 0.3 105213
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
t
s
t
f
V
R
, REVERSE VOLTAGE (VOLTS)
10
100
100
200
50
Figure 7. Capacitance
70
5020107.05.03.01.0
C, CAPACITANCE (pF)
2.0
T
J
= 25°C
C
ib
C
ob
MJE243 (NPN)
MJE253 (PNP)
30
NPN MJE243
PNP MJE253
20
7030
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